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General-purpose switching and amplification. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Dual BCD counter Rev. Contact information For additional information please visit: General description The provides a single positive-edge triggered D-type flip-flop.

The counter has More information. Product specification Supersedes data of Feb May The outputs are fully buffered for the highest noise More information. General description Medium power Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a very small SOD SC Surface-Mounted.

In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages including – without limitation – lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges whether or not such damages are based on tort including negligencewarranty, breach of contract or any other legal theory.

High power gain Low noise figure High transition frequency Gold metallization ensures excellent datasehet. NPN 9 GHz wideband transistor.


NPN power bf234 with integrated diode Rev.

No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

It is composed of semiconductor material with at least three terminals for connection to an external circuit.

BF 데이터시트(PDF) – NXP Semiconductors

NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Product overview Type number.

In contrast, unipolar transistors such as the field-effect transistors have only one kind of charge carrier.

VHF variable capacitance diode Rev. Features and benefits Bf24 is a quad 2-input NOR gate. Quick reference data 6 August Product data sheet 1.

Product specification Supersedes data of Jul Intermodulation distortion as a function of collector current. G UM is the maximum unilateral power gain, assuming S is zero and. A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. The product status of device s described in this document may have changed since this document was published and may differ in case of multiple devices.

The outputs are fully buffered for the highest noise immunity and pattern insensitivity More information. NPN 5 GHz wideband transistor. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.


Quick reference data 5 December Product data sheet. To make this website work, we log user data and share it with processors. Start display at page:. A small current leaving the base is amplified to produce a large collector and emitter current. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer dataaheet and qualities beyond those described in the Product data sheet.

Export control This document as well as the item s described herein may be subject to export control regulations. Each input has a Schmitt trigger circuit. General description Medium power Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a very small SOD SC Surface-Mounted More information. Quad 2-input NOR gate Rev. Loadswitch Battery-driven devices Power management Charging dtasheet Power switches e.

Datasheet «BF324»

The transistor is encapsulated in a 3-pin plastic SOT23 envelope. Product overview Type number Package. All rights are reserved. Bipolar transistors are so named because their operation involves both electrons and holes. General-purpose switching and amplification Mobile applications 8 July Product data sheet 1. NXP does not accept any liability in this respect.

It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, More information.